Product description
Thin film lithium niobate intensity modulator (integrated light source) is a high-performance and highly integrated electro-optic conversion device, which is independently developed by our company and has complete independent intellectual property rights. The product integrates a low-noise DFB laser and a high-stability thin-film lithium niobate modulator chip, and is packaged by high-precision coupling technology to achieve ultra-high electro-optical conversion efficiency. Compare with that traditional lithium niobate crystal modulator, the product has the characteristics of low half-wave voltage, high stability, small device size and thermal-optical bias control, and can be widely apply to the fields of digital optical communication, microwave photonics, backbone communication networks, communication scientific research projects and the like.
Product features
Integrated low RIN laser sources
RF bandwidth up to 40 GHz
Half-wave voltage down to 3.0 V
High integration, small device size
The output optical power is up to 12 dBm at full on
Technical parameters
Category | Parameter | Symbol | Unit | Indicators | |
Optical properties | Operating wavelength (@TEC 25 °C, LD 350 mA) | λ | nm | 1550 ± 2 | |
Optical Extinction Ratio (@ DC) (*) | ER | dB | ≥ 20 | ||
Optical return loss | ORL | dB | ≤ -27 | ||
Modulator full-open output optical power (@TEC 25 °C, LD 350 mA) (**) | Pout | dBm | Maximum: 12 Typical value: 10 | ||
Relative intensity noise (@ 2 GHz, TEC 25 °C, LD 250 mA) | RINLD | dBc/Hz | Maximum: -158 Typical value: -160 | ||
Electrical properties | 3 dB electro-optic bandwidth (From 2 GHz) | S21 | GHz | X1: 2 | X1: 4 |
Minimum: 18 Typical value: 20 | Minimum: 36 Typical value: 40 | ||||
RF half-wave voltage (@ 50 kHz) | Vπ | V | Maximum: 3.5 Typical value: 3.0 | ||
Thermally adjusted offset half-wave power | Pπ | mw | ≤ 50 | ||
Recommended TEC Set Temperature Range | TTEC | °C | 10~40 | ||
Thermistor resistance (@ room temperature) | Rth | Ohm | 10 K±1.0% | ||
RF return loss (2 to 40 GHz) | S11 | dB | ≤ -10 | ||
Working conditions | Operating Temperature (@ TEC 40 ° C) | TO | °C | -40~70 | |
* High extinction ratio (> 25 dB) is customizable.
* * High full output optical power (> 12 dBm) is customizable.
Damage threshold
If the device works beyond the maximum damage threshold, it will cause irreversible damage to the device, and such device damage is not within the scope of maintenance service.
Parameter | Symbol | Minimum value | Maximum value | Unit |
RF input power | Sin | - | 18 | dBm |
RF Input Swing Voltage | Vpp | -2.5 | +2.5 | V |
RF Input RMS Voltage | Vrms | - | 1.78 | V |
Laser current | ILD | - | 400 | mA |
TEC current | ITEC | - | 1.5 | A |
Hot-tuned bias voltage | Uheater | - | 4.5 | V |
Thermal adjustment of bias current | Iheater | - | 50 | mA |
Storage temperature | TS | -40 | 85 | ℃ |
Relative humidity (no condensation) | RH | 5 | 90 | % |
Package dimensions and pin definitions (mm)
Note: Data marked with REF. Are reference values only.
Pin | Symbol | Description |
1 | TEC+ | TEC positive pole |
2 | TEC- | TEC negative electrode |
3 | LD+ | Laser anode |
4 | LD- | Laser cathode |
5 | MPD2+ | Laser backlight monitoring PD anode |
6 | MPD2- | Laser backlight monitoring PD cathodic |
7 | Rth | Thermistor electrode |
8 | Rth | Thermistor electrode |
9 | MPD1- | Modulator outgoing light monitoring PD cathodic |
10 | MPD0- | Modulator incident light monitoring PD cathodic |
11 | MPD1 & MPD0 + | Common anode of light monitor PD in and out of modulator |
12 | Heater | Thermally adjusted bias electrode |
13 | Heater | Thermally adjusted bias electrode |
14 | - | No definition |
RF | RF Connector (*) | 2.92 mm K connector |
Out | Light emitting fiber (* *) | FC/APC, SMF |
* Customizable 1.85 mm connector or J connector.
* * Polarization-maintaining fiber can be customized.
S21 & S11 Test Sample (40 GHz Typical)
Ordering information：HC-LB-X1CXNPBB61
Optional X1 | Description | Option number |
20G | 3 dB electro-optic bandwidth | 2 |
40G | 3 dB electro-optic bandwidth | 4 |
Product Description: 20 GHz/40 GHz Thin Film Lithium Niobate Intensity Modulator (Integrated Light Source).
If you need more information, Please contact us .
Русский